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| PN100/PN100A/MMBT100/MMBT100A PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier * This device is designed for general purpose amplifier applications at collector currents to 300mA. * Sourced from process 10. 1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 Mark: N1/N1A 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings* TC=25C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 45 75 6.0 500 -55 ~ +150 Units V V V mA C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition IC = 10A, IB = 0 IC = 1mA, IE = 0 IC = 10A, IC = 0 VCB = 60V VCE = 40V VEB = 4V IC = 100A, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V* IC = 150mA, VCE = 5.0V * VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 200mA, IB = 20mA IC = 10mA, IB = 1.0mA IC = 200mA, IB = 20mA VCE = 20V, IC = 20mA VCB = 5.0V, f = 1.0MHz IC = 100A, VCE = 5.0V RG = 2.0k, f = 1.0KHz 100 100A 250 4.5 5.0 4.0 100 100A 100 100A 100 100A 80 240 100 300 100 100 100 Min. 75 45 6.0 50 50 50 Max. Units V V V nA nA nA Off Characteristics Collector-Base Breakdown Voltage BVCBO BVCEO BVEBO ICBO ICES IEBO hFE Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain On Characteristics 450 600 350 0.2 0.4 0.85 1.0 V V V V MHz pF dB dB Small Signal Characteristics fT Cobo NF Current Gain Bandwidth Product Output Capacitance Noise Figure * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Thermal Characteristics TA=25C unless otherwise noted Max. Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN100 PN100A 625 5.0 83.3 200 357 *MMBT100 *MMBT100A 350 2.8 Units mW mW/C C/W C/W * Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06." (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 400 Vce = 5V 125 C 0.4 300 25 C = 10 0.3 25 C 200 - 40 C 0.2 100 0.1 125 C - 40 C 0 10 20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA) 500 1 10 100 I C - COLLECTOR CURRENT (mA) 400 Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VBESAT - COLLECTOR-EMITTER VOLTAGE (V) VBEON - BASE-EMITTER ON VOLTAGE (V) 1 0.8 0.6 0.4 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 - 40 C 1 0.8 0.6 0.4 V CE = 5V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 - 40 C 25 C 125 C 25 C 125 C = 10 Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current I CBO - COLLE CTOR CURRENT (nA) 10 VCB = 60V 100 f = 1.0 MHz CAPACITANCE (pF) 10 Cib Cob 1 1 0.1 25 50 75 100 125 TA - AMBIE NT TEMP ERATURE ( C) 150 0.1 0.1 1 10 Vce - COLLECTOR VOLTAGE (V) 100 Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Input and Output Capacitance vs Reverse Voltag (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Typical Characteristics 300 270 240 210 TIME (nS) (Continued) 700 ts P D - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 180 150 120 90 60 30 0 10 td IB1 = IB2 = Ic / 10 V cc = 10 V tf tr 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Figure 7. Switching Times vs Collector Current Figure 8. Power Dissipation vs Ambient Temperature (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Package Dimensions (Continued) SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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